IPP055N03L

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP055N03L，IIPP055N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode: ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.2 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP055N03L，IIPP055N03L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=30A IGSS Gate-Source Leakage Current VGS= 20V，VDS=0V IDSS Drain-Source Leakage Current VDS=30V; VGS= 0V VSD Diode forward voltage IF =30A, VGS = 0 V MIN TYP MAX UNIT 30 V 1 2.2 V 7.8 mΩ 0.1 μA 1 μA 1.1 V NOTICE： ISC res...