IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R ...
IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
120 V 7.6 mW 100 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Type
IPI076N12N3 G
IPP076N12N3 G
Package Marking
PG-TO262-3 076N12N
PG-TO220-3 076N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 W
Gate source voltage3)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
100
A
76
400
230
mJ
±20
V
188
W
-55 ... 175
°C
55/175/56
Rev. 2.4
page 1
2013-09-25
IPI076N12N3 G IPP076N12N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction 4) -
R thJA minimal footprint
-
ambient
6 cm2 cooling area5)
-
-
0.8 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
120
-
Gate thr...
