IPW50R250CP

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R250CP IIPW50R250CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤250mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 31 PD Total Dissipation @TC=25℃ 114 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.1 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R250CP IIPW50R250CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 500 VGS(th) Gate Threshold Voltage VDS=VGS; ID=520μA 2.5 V 3.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=7.8A 0.25 Ω IGSS Gate-Source Leakage Current VGS= 20V; VDS= 0V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSD Diode forward voltage IF=7.8A, VGS = 0V 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the...