isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW50R299CP IIPW50R299CP
·FEATURES ·Static drain-source on-resi...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPW50R299CP IIPW50R299CP
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤299mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Peak Current Capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
26
PD
Total Dissipation @TC=25℃
104
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1.2 62
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPW50R299CP IIPW50R299CP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
500
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=440μA
2.5
V
3.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=6.6A
0.299 Ω
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=500V; VGS= 0V
VSD
Diode forward voltage
IF=6.6A, VGS = 0V
0.1
μA
1
μA
1.2
V
NOTICE: ISC reserves the rights to make changes of the...