isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R060C7 IIPW60R060C7
·FEATURES ·Static drain-source on-resi...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPW60R060C7 IIPW60R060C7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Suitable for hard and soft switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
35
IDM
Drain Current-Single Pulsed
135
PD
Total Dissipation @TC=25℃
162
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 0.772
62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPW60R060C7 IIPW60R060C7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
600
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.8mA
3
V
4
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=15.9A
60
mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF=15.9A, VGS = 0V
0.1
μA
1
μA
V
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