DatasheetsPDF.com

IPW60R125C6 Dataheets PDF



Part Number IPW60R125C6
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPW60R125C6 DatasheetIPW60R125C6 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R125C6 IIPW60R125C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 89 PD T.

  IPW60R125C6   IPW60R125C6


Document
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R125C6 IIPW60R125C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 89 PD Total Dissipation @TC=25℃ 219 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.57 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R125C6 IIPW60R125C6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.96mA 2.5 V 3.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=14.5A 99 mΩ IGSS Gate-Source Leakage Current VGS= 20V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=14.5A, VGS = 0V 0.1 μA 2 μA V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


IPW60R120C7 IPW60R125C6 IPW60R125P6


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)