IPW60R280P6

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R280P6 IIPW60R280P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 39 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.2 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R280P6 IIPW60R280P6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.43mA 3.5 V 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=5.2A 280 mΩ IGSS Gate-Source Leakage Current VGS= 20V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=6.5A, VGS = 0V 0.1 μA 1 μA V NOTICE： ISC reserves the rights to make changes of the content herein the datas...