IRF200P223

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11.5mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 313 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.48 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=270μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=60A IGSS Gate-Source Leakage Current VGS= 20V IDSS Drain-Source Leakage Current VDS=160V; VGS= 0V VSD Diode forward voltage IS=60A, VGS = 0V MIN TYP MAX UNIT 200 V 2.0 4.0 V 11.5 mΩ 0.1 μA 1.0 μA 1.2 V NOTICE： ISC reserves ...