INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IRF250P225,IIRF250P225
·FEATURES ·Static drain-source on-resista...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor IRF250P225,IIRF250P225
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·OR-ring and redundant power switches
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
69
IDM
Drain Current-Single Pulsed
276
PD
Total Dissipation @TC=25℃
313
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 0.48 40
UNIT ℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor IRF250P225,IIRF250P225
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=270μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=41A
IGSS
Gate-Source Leakage Current
VGS= 20V
IDSS
Drain-Source Leakage Current
VDS=200V; VGS= 0V
VSD
Diode forward voltage
IS=41A, VGS = 0V
MIN TYP MAX UNIT
250
V
2.0
4.0
V
22
mΩ
0.1
μA
1.0
μA
1.2
V
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