isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
IRF441
FEATURES ·VGS Rated at ±20V ·Silicon Gate for Fast Switc...
isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
IRF441
FEATURES ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature ·Rugged ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
450
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
8
A
IDM
Drain Current-Single Plused
32
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-A Thermal Resistance,Junction to Ambient
60
℃/W
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isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
IRF441
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS=0
VSD
...