IRF441

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF441 FEATURES ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A IDM Drain Current-Single Plused 32 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 60 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF441 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=0.25mA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS=0 VSD ...