isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF520
·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Tech...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF520
·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Converters ·Motor Control ,Audio Amplifiers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25℃
70
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-65~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.14 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF520
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
VSD
Forward On-Voltage
IS= 10A; VGS=0
MIN MAX UNIT
100
V
2
4
V
0.27
Ω
±100 nA
...
