IRF730A

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF730A FEATURES ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch Mode Power Supply ·Uninterruptable Power Supply ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous@ TC=25℃ 5.5 ID A Drain Current-continuous@ TC=100℃ 3.5 IDM Drain Current-Single Plused 22 A PD Total Dissipation @TC=25℃ 74 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF730A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.3A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS=0 VSD Forward On-Voltage IS= 5.5A; VGS=0 Gfs Forward...