isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1503， IIRF1503
·FEATURES ·Static drain-source on-resistance:...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF1503， IIRF1503
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.3mΩ ·Enhancement mode:
Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
75
IDM
Drain Current-Single Pulsed
960
PD
Total Dissipation @TC=25℃
200
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.75 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF1503，IIRF1503
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
VGS(th)
Gate Threshold Voltage
VDS=10V; ID=250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=140A
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current VDS=30V; VGS= 0V
VSD
Diode forward voltage
Is =140A, VGS = 0 V
MIN TYP MAX UNIT
30
V
2.0
4.0
V
3.3 mΩ
±0.2 μA
...
