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IRF3711 Dataheets PDF



Part Number IRF3711
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRF3711 DatasheetIRF3711 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3711, IIRF3711 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGS Gate-Source Voltage ±20 ID Drain Current-Co.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3711, IIRF3711 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 440 PD Total Dissipation @TC=25℃ 120 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.04 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3711, IIRF3711 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250µA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=15A IGSS Gate-Source Leakage Current VGS=± 16V IDSS Drain-Source Leakage Current VDS=16V; VGS= 0V VSD Diode forward voltage IS =30A, VGS = 0 V MIN TYP MAX UNIT 20 V 1.0 3.0 V 6.0 mΩ ±0.2 μA 20 μA 1.3 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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