IRFP4710

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4710，IIRFP4710 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: Vth =3.5 to 5.5 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC Converters ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 72 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 190 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.81 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4710，IIRFP4710 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=45A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=95V; VGS= 0V VSD Diode forward voltage IS=45A, VGS = 0V MIN TYP MAX UNIT 100 V 3.5 5.5 V 14 mΩ ±0.1 μA 1.0 μA 1.3 V NOTI...