IRFP7718

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP7718，IIRFP7718 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.8mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 IDM Drain Current-Single Pulsed 1590 PD Total Dissipation @TC=25℃ 517 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.29 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP7718，IIRFP7718 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=100A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=75V; VGS= 0V VSD Diode forward voltage IS=100A, VGS = 0V MIN TYP MAX UNIT 75 V 2.0 4.0 V 1.8 mΩ ±0.1 μA 1.0 μA 1.3 V NOTICE： ISC reserves the rights to ma...