IRL2203N

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL2203N，IIRL2203N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 116 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 180 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.85 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL2203N， IIRL2203N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250µA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=60A IGSS Gate-Source Leakage Current VGS=± 16V IDSS Drain-Source Leakage Current VDS=30V; VGS= 0V VSD Diode forward voltage IS =60A, VGS = 0 V MIN TYP MAX UNIT 30 V 1.0 V 7.0 mΩ ±0.1 μA 25 μA 1.2 V NOTICE： ISC reserves the...