isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
STP60NF10
·FEATURES ·Drain Current ID= 80A@ TC=25℃ ·Drain Sourc...
isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
STP60NF10
·FEATURES ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching mode power supplies ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
80
A
ID(puls)
Pulse Drain Current
300
A
Ptot
Total Dissipation@TC=25℃
300
W
Tstg
Storage Temperature Range
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.5 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
STP60NF10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=80A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=40A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS= 0
MIN TYPE MAX UNIT
100
V
2.0
4.0
V
1.3
V
0.023 Ω
±100 nA
1
µA
NOTICE： ISC reserves the rights to make changes of the conte...
