SPW11N60C3

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.5mA 2.1 3.9 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=7A 380 mΩ IGSS Gate-Source Leakage Current VGS= 30V; VDS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=IS, VGS = 0V 0.1 μA 25 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content...