TK4A80E

MOSFETs Silicon N-Channel MOS (π-MOS) TK4A80E 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK4A80E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 ) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR 800 ±30 4.0 12 35 152 4.0 4.0 12 150 -55 to 150 2000 0.6 V A W mJ A  V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and i...