TK5A60W5

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A60W5，ITK5A60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.95Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.23mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.17 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A60W5，ITK5A60W5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.23mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.3A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSDF Diode forward voltage IDR =4.5A, VGS = 0 V MIN TYP MAX UNIT 600 V 3 4.5 V 950 mΩ ±1 μA 100 μA...