iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK5R3A06PL,ITK5R3A06PL
·FEATURES ·Low drain-source on-resistance...
iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK5R3A06PL,ITK5R3A06PL
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 4.1mΩ (typ.) (VGS = 10 V) ·Enhancement mode:
Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
56
IDM
Drain Current-Single Pulsed
280
PD
Total Dissipation @TC=25℃
36
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 4.16 62.5
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK5R3A06PL,ITK5R3A06PL
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
VDS= 10V; ID=0.3mA VGS=4.5V; ID=14A VGS=10V; ID=28A VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS= 60V; VGS= 0V
VSDF
Diode forward voltage
IDR =56A, VGS = 0 V
MIN TYP MAX UNIT
60
V
1.5
2.5
V
6.2
9.3
mΩ
...