iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK8A25DA,ITK8A25DA
·FEATURES ·Low drain-source on-resistance:
RD...
iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK8A25DA,ITK8A25DA
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.41Ω (typ.) ·Enhancement mode:
Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
7.5
IDM
Drain Current-Single Pulsed
30
PD
Total Dissipation @TC=25℃
30
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 4.16 62.5
UNIT ℃/W ℃/W
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iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK8A25DA,ITK8A25DA
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.0mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=3.8A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=250V; VGS= 0V
VSDF
Diode forward voltage
IDR =7.5A, VGS = 0 V
MIN TYP MAX UNIT
250
V
1.5
3.5
V
410 500 mΩ
±1 μA
10
μA
1.7
V
NOTICE: IS...