TK8R2E06PL

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK8R2E06PL，ITK8R2E06PL ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤8.2mΩ. (VGS = 10 V) ·Enhancement mode: Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 81 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.84 83.3 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK8R2E06PL，ITK8R2E06PL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=0.3mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=25A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V VSDF Diode forward voltage IDR =50A, VGS = 0 V MIN TYP MAX UNIT 60 V 1.5 2.5 V 8.2 mΩ ±0.1 μA 10 μA 1.5 V NOTI...