iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK10A60D5,ITK10A60D5
·FEATURES ·Low drain-source on-resistance:
...
iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK10A60D5,ITK10A60D5
·FEATURES ·Low drain-source on-resistance:
RDS(on) = 0.8Ω (typ.) ·Enhancement mode:
Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
10
IDM
Drain Current-Single Pulsed
40
PD
Total Dissipation @TC=25℃
45
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.78 62.5
UNIT ℃/W ℃/W
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iscN-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK10A60D5,ITK10A60D5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.0mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=600V; VGS= 0V
VSDF
Diode forward voltage
IDR =10A, VGS = 0 V
MIN TYP MAX UNIT
600
V
2.5
4.5
V
800 1050 mΩ
±1 μA
10
μA
1.7
V
NOTICE: IS...