TK10E80W

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E80W，ITK10E80W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.55Ω. ·Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.5 IDM Drain Current-Single Pulsed 38 PD Total Dissipation @TC=25℃ 130 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.962 83.3 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10E80W，ITK10E80W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=0.45mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=4.8A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS=800V; VGS= 0V VSDF Diode forward voltage IDR =9.5A, VGS = 0 V MIN TYP MAX UNIT 800 V 3.0 4.0 V 0.55 Ω ±1 μA 10 μA 1.7 V NOTICE： ISC reser...