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TK10Q60W Dataheets PDF



Part Number TK10Q60W
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet TK10Q60W DatasheetTK10Q60W Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10Q60W,ITK10Q60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.43Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous .

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10Q60W,ITK10Q60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.43Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 9.7 IDM Drain Current-Single Pulsed 38.8 PD Total Dissipation @TC=25℃ 80 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.57 125 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10Q60W,ITK10Q60W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current VDS=10V; ID=0.5mA VGS=10V; ID=4.9A VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSDF Diode forward voltage IDR =9.7A, VGS = 0 V MIN TYP MAX UNIT 600 V 2.7 3.7 V 0.43 Ω ±1 μA 10 μA 1.7 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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