TK11Q65W

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK11Q65W，ITK11Q65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.44Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11.1 IDM Drain Current-Single Pulsed 44.4 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.25 125 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK11Q65W，ITK11Q65W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current VDS=10V; ID=0.45mA VGS=10V; ID=5.5A VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSDF Diode forward voltage IDR =11.1A, VGS = 0 V MIN TYP MAX UNIT 650 V 2.5 3.5 V 0.44 Ω ±1 μA 10 μA 1.7 V NOTICE： ISC reser...