TK22A65X5

MOSFETs Silicon N-Channel MOS (DTMOS-H) TK22A65X5 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.135 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.1 mA) 3. Packaging and Internal Circuit TK22A65X5 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAS IDR IDRP Tch Tstg VISO(RMS) TOR 650 ±30 22 88 45 361 5.5 22 88 150 -55 to 150 2000 0.6 V A W mJ A A A  V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Dera...