TK17A65W5

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65W5，ITK17A65W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 17.3 IDM Drain Current-Single Pulsed 69.2 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.78 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK17A65W5，ITK17A65W5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.9mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=8.7A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V VSDF Diode forward voltage IDR =17.3A, VGS = 0 V MIN TYP MAX UNIT 650 V 3.0 4.5 V 190 230 mΩ ±1 μA 100 μA 1.7 V NOT...