isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK20E60U,ITK20E60U
·FEATURES ·Low drain-source on-resistance:
R...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK20E60U,ITK20E60U
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.19Ω. ·Enhancement mode:
Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
40
PD
Total Dissipation @TC=25℃
190
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.658 83.3
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK20E60U,ITK20E60U
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=10mA
VGS(th)
Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=10A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=600V; VGS= 0V
VSDF
Diode forward voltage
IDR =20A, VGS = 0 V
MIN TYP MAX UNIT
600
V
3.0
5.0
V
190 mΩ
±1 μA
100 μA
1.7
V
NOTICE: ISC reserves the ri...