TK22A10N1

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK22A10N1，ITK22A10N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 11.5mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 22 IDM Drain Current-Single Pulsed 102 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.16 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK22A10N1，ITK22A10N1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.3mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=11A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 100V; VGS= 0V VSDF Diode forward voltage IDR =22A, VGS = 0 V MIN TYP MAX UNIT 100 V 2.0 4.0 V 11.5 13.8 mΩ ±0.1 μA 10 ...