TK30A06N1

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30A06N1，ITK30A06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 12.2mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 95 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 5.00 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK30A06N1，ITK30A06N1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.2mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=15A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 60V; VGS= 0V VSDF Diode forward voltage IDR =30A, VGS = 0 V MIN TYP MAX UNIT 60 V 2.0 4.0 V 12.2 15.0 mΩ ±0.1 μA 10 μA ...