TK32E12N1

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK32E12N1，ITK32E12N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 98 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.27 83.3 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK32E12N1，ITK32E12N1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current VDS=10V; ID=0.5mA VGS=10V; ID=16A VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS=120V; VGS= 0V VSDF Diode forward voltage IDR =32A, VGS = 0 V MIN TYP MAX UNIT 120 V 2.0 4.0 V 13.8 mΩ ±0.1 μA 10 μA 1.2 V NOTIC...