Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK35A08N1，ITK35A08N1
·FEATURES ·Low drain-source on-resistance:...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK35A08N1，ITK35A08N1
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 12.0mΩ (VGS = 10 V) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
80
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
35
IDM
Drain Current-Single Pulsed
116
PD
Total Dissipation @TC=25℃
30
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 4.16 62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK35A08N1，ITK35A08N1
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.3mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=17.5A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS= 80V; VGS= 0V
VSDF
Diode forward voltage
IDR =35A, VGS = 0 V
MIN TYP MAX UNIT
80
V
2.0
4.0
V
12.2 mΩ
±0.1 μA
10
μA
1.2
V
...
