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TK72A12N1 Dataheets PDF



Part Number TK72A12N1
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet TK72A12N1 DatasheetTK72A12N1 Datasheet (PDF)

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK72A12N1,ITK72A12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Curr.

  TK72A12N1   TK72A12N1


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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK72A12N1,ITK72A12N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.5mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 72 IDM Drain Current-Single Pulsed 355 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.77 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK72A12N1,ITK72A12N1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=36A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 120V; VGS= 0V VSDF Diode forward voltage IDR =72A, VGS = 0 V MIN TYP MAX UNIT 120 V 2.0 4.0 V 4.5 mΩ ±0.1 μA 10 μA 1.2 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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