TK80A04K3L

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK80A04K3L，ITK80A04K3L ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.4mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 48 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.125 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK80A04K3L，ITK80A04K3L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current VDS= 10V; ID=1mA VGS=6V; ID=40A VGS=10V; ID=40A VGS= ±16V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 40V; VGS= 0V VSDF Diode forward voltage IDR =80A, VGS = 0 V MIN TYP MAX UNIT 40 V 2.0 3.0 V 3.5 mΩ 2.4 ±10 μ...