2SJ389S

isc P-Channel MOSFET Transistor 2SJ389S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤135mΩ(@VGS= -10V; ID= -5A) ·High speed switching ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -10 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Channel-to-case thermal resistance Rth(j-c) MAX 4.17 UNIT ℃/W isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -5A IGSS Gate-Source Leakage Current VGS= ±20V; VDS= 0V IDSS Drain-Source Leakage Current VDS= -60V; VGS= 0V VSD Diode forward voltage IS= -10A, VGS = 0V 2SJ389S MIN TYP MAX UNIT -60 V -1 -2.5 V 135 mΩ ±100 nA -1 μA -1 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for ...