isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 1.5Ω@10V ·Fast Switching Speed ·100% ...
isc N-Channel MOSFET
Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 1.5Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
5
IDM
Drain Current-Single Pulsed
10
PD
Total Dissipation @TC=25℃
50
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 2.5
UNIT ℃/W
2SK2326
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=3A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward on voltage
ISD =5A, VGS = 0 V
2SK2326
MIN TYP MAX UNIT
600
V
2
5
V
1.5
Ω
±1
μA
100 μA
1.6
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th...
