2SK2765-01

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 7 IDM Drain Current-Single Pulsed 28 PD Total Dissipation 125 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.0 UNIT ℃/W 2SK2765-01 isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1.0mA VGS(off) Gate Threshold Voltage VDS=10V; ID=1.0mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=3.5A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 800V; VGS= 0; VSDF Diode forward voltage ISD=7A; VGS = 0V 2SK2765-01 MIN TYP MAX UNIT 800 V 3.5 4.5 V 1.62 2.0 Ω ±0.1 μA 0.5 mA 1.0 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC prod...