2SK2842

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 48 PD Total Dissipation 45 Tj Operating Junction Temperature 150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.13 62.5 UNIT ℃/W ℃/W 2SK2842 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=1.0mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=6A IGSS Gate-Source Leakage Current VGS=±25V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 500V; VGS= 0V; VSDF Diode forward voltage ISD=12A, VGS = 0 V 2SK2842 MIN TYP MAX UNIT 500 V 2.0 4.0 V 400 520 mΩ ±10 μA 100 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datash...