2SK3271

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation 155 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.81 UNIT ℃/W 2SK3271 isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=10mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=40A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=60V; VGS= 0; VSDF Diode forward voltage ISD=80A, VGS = 0 V 2SK3271 MIN TYP MAX UNIT 60 V 2.5 3.5 V 5.0 6.5 mΩ ±0.1 μA 1 100 μA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products a...