AOD4N60

Isc N-Channel MOSFET Transistor AOD4N60 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 4 2.6 14 PD Total Dissipation @TC=25℃ 104 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -50~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 55 1.2 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=5V; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2A IGSS Gate-Source Leakage Current VGS=±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSDF Diode forward voltage ISD=1A, VGS = 0 V AOD4N60 MIN TYP MAX UNIT 600 V 3.4 4.5 V 1.8 2.3 Ω ±0.1 μA 1 μA 1.0 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time ...