Isc N-Channel MOSFET Transistor
AOD4184A
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·...
Isc N-Channel MOSFET
Transistor
AOD4184A
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
50 40
120
PD
Total Dissipation @TC=25℃
50
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.0 55
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=20A
IGSS
Gate-Source Leakage Current
VGS=±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=40V; VGS= 0V
VSDF
Diode forward voltage
ISD=1A, VGS = 0 V
AOD4184A
MIN TYP MAX UNIT
40
V
1.7
2.6
V
5.8
7.0
mΩ
±0.1 μA
1
μA
1
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time ...
