AOT414

AOT414 100V N-channel MOSFET General Description Product Summary The AOT414 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.AOT414 and AOT414L are electrically identical. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 43A < 25mΩ < 31mΩ TO220 Top View Bottom View D D S G G GD SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 43 31 100 5.6 4.5 28 39 115 58 1.9 1.23 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 11.6 54 0.7 Max 13.9 65 1.3 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1: May 2012 www.aosmd.com Page 1 of 7 AOT414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ...