isc N-Channel MOSFET Transistor
AOTF2916L
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 34mΩ@10V ·Fast Switching S...
isc N-Channel MOSFET
Transistor
AOTF2916L
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 34mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
17
IDM
Drain Current-Single Pulsed
50
PD
Total Dissipation @TC=25℃
23.5
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 6.38
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 250μA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 250μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=10A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
VSD
Diode forward on voltage
ISD =10A, VGS = 0 V
AOTF2916L
MIN TYP MAX UNIT
100
V
1.6
2.7
V
34
mΩ
±100 nA
1
μA
1
V
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