AOTF2916L

isc N-Channel MOSFET Transistor AOTF2916L ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 34mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 50 PD Total Dissipation @TC=25℃ 23.5 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 6.38 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=10A IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V VSD Diode forward on voltage ISD =10A, VGS = 0 V AOTF2916L MIN TYP MAX UNIT 100 V 1.6 2.7 V 34 mΩ ±100 nA 1 μA 1 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only a...