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FCP650N80Z
N-Channel MOSFET
Description
FCP650N80Z — N-Channel SuperFET® II MOSFET December 2015 FCP650N80Z N-Channel SuperFET® II MOSFET 800 V, 10 A, 650 m Features RDS(on) = 530 mTyp.) Ultra Low Gate Charge (Typ. Qg = 27 nC) Low Eoss (Typ. 2.8 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability A...
Fairchild Semiconductor
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