FDP2D3N10C

MOSFET – N-Channel, Shielded Gate POWERTRENCH) 100 V, 222 A, 2.3 mW FDP2D3N10C, FDPF2D3N10C General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features Max rDS(on) = 2.3 mW at VGS = 10 V, ID = 100 A Extremely Low Reverse Recovery Charge, Qrr 100% UIL Tested RoHS Compliant Applications Synchronous Rectification for ATX / Server / Telecom PSU Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter DATA SHEET www.onsemi.com VDS rDS(ON) MAX ID MAX 100 V 2.3 mW @ 10 V 222 A* *Drain current limited by maximum junction temperature. Package limitation current is 120 A. TO−220 CASE 221A TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT MARKING DIAGRAM $Y&Z&3&K XXX 2D3N10C $Y = onsemi Logo XXX2D3N10C = Device Code (XXX = FDP, FDPF) &Z = Assembly Plant Code &3 = 3−Digit Date Code Format &K = 2−Digits Lot Run Traceability Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 November, 2021 − Rev. 2 Publication Order Number: FDP2D3N10C/D FDP2D3N10C, FDPF2D3N10C MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Parameter FDP2D3N10C FDPF2D3N10C Unit VDS Drain to Source Voltag...