FDPF4D5N10C

FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.5 mΩ Features „ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 100 A „ Extremely Low Reverse Recovery Charge, Qrr „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications „ Synchronous Rectification for ATX / Server / Telecom PSU „ Motor Drives and Uninterruptible Power Supplies „ Micro Solar Inverter D G DS TO-220 G DS TO-220F G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TC = 100°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range (Note 3) (Note 3) (Note 1) (Note 2) Ratings FDP4D5N10C FDPF4D5N10C 100 100 ±20 ±20 128* 128* 91 91 512 512 486 150 37.5 2.4 2.4 -55 to +175 -55 to +175 * Drain current limited by maximum junction temperature. Package limitation current is 120A. Units V V A mJ W °C Thermal Characteristics Symbol Parameter ...