FDB110N15A

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Source Voltage : VDSS= 150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 92 A ID(puls) Pulse Drain Current 369 A Ptot Total Dissipation@TC=25℃ 234 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.64 ℃/W FDB110N15A . isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5.5A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=92A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 120V; VGS= 0 VDS= 120V; VGS= 0; TC=150℃ FDB110N15A MIN TYPE MAX UNIT 150 V 2.0 4.0 V 1.25 V 11 mΩ ±100 nA 1 µA 500 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time with...